Study of Ti/Si/Ti/Al/Ni/Au ohmic contact for AlGaN/GaN HEMT
نویسندگان
چکیده
منابع مشابه
Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures
A multi-faceted study on the reduction of ohmic contact resistance to AlN/GaN-based heterostructures is presented. Minimum contact resistance of 0.5 X mm has been achieved by partially etching the AlN barrier layer using a chlorine-based plasma dry-etch prior to ohmic contact metallization. For thin GaNcapped AlN/GaN heterostructures, we find it is necessary to remove the GaN cap in the vicinit...
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Ohmic Contact of Cu/Mo and Cu/Ti Thin Layers on Multi-Crystalline Silicon Substrates
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2017
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/938/1/012073